Abstract
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain. The development of such sensors requires the identification and control of the main factors that may degrade the timing performance as well as the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a 90Sr source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics shows a time resolution of 140 ps at an amplifier current of 7 μA and 45 ps at a power consumption of 150 μA. The resolution on the measurement of the signal time-over-threshold, which is used to correct for time walk, is the main factor affecting the timing performance of this prototype.
Highlights
Introduction: SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain
The simulation shows that, in order to estimate the voltage noise at the output of the amplifier that we need to calculate the Equivalent Noise Charge (ENC), the standard deviation of the voltage noise obtained by the measurement of the noise hit rate at the output of the discriminator should be increased by 20% for an amplifier current of 7 μA, 50% for a current of 20 μA and 60% for a current of 50 μA
The timing performance of a small-size monolithic silicon pixel prototype featuring an amplifier realised with SiGe HBT was measured with a 90Sr source setup
Summary
: SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain. The development of such sensors requires the identification and control of the main factors that may degrade the timing performance as well as the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. The prototype integrates a front-end electronic circuit consisting of a HBT-based amplifier and a CMOS-based discriminator originally developed to read large pixels of a silicon sensor for medical applications [7], which was not designed to operate at very low current. The measurement of the amplitude of the signal at the output of the amplifier was not possible
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