Abstract

As the application of nanotechnology increases continuously, the need for controlled size nanoparticles also increases. Therefore, in this work, we discussed the growth mechanism of carbon nanoparticles generated in Ar+CH4 multi-hollow discharge plasmas. Using the plasmas, we succeeded in continuous generation of hydrogenated amorphous carbon nanoparticles with controlled size (25–220 nm) by the gas flow. Among the nanoparticle growth processes in plasmas, we confirmed the deposition of carbon-related radicals was the dominant process for the method. The size of nanoparticles was proportional to the gas residence time in holes of the discharge electrode. The radical deposition developed the nucleated nanoparticles during their transport in discharges, and the time of flight in discharges controlled the size of nanoparticles.

Highlights

  • Carbon nanoparticles (CNPs) have attracted tremendous attention for their various applications, such as electrical conductivity improvement of polymer, lubrication applications, cancer cell treatments, bioimaging diagnostics [1,2,3]

  • The solution process is a conventional method of producing CNPs, but this method has limitations like impurity, unexpected agglomeration, and low throughput due to the multistage process [8,9,10,11]

  • The plasma process plays a promising role because it is a dry process using low pressure resulting from reducing impurity and avoid agglomeration or coagulation due to the charge of CNPs

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Summary

Introduction

Carbon nanoparticles (CNPs) have attracted tremendous attention for their various applications, such as electrical conductivity improvement of polymer, lubrication applications, cancer cell treatments, bioimaging diagnostics [1,2,3]. It is essential to develop a simple method to control the size and structure of CNPs [4,5,6,7]. The plasma process plays a promising role because it is a dry process using low pressure resulting from reducing impurity and avoid agglomeration or coagulation due to the charge of CNPs. the traditional plasma process has a problem regarding throughput due to pulsed discharges for size control [12,13,14]. Traditional plasma process has the discharge off period to wait for pumping out the particles from the gas phase, resulting in lower throughput.

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