Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°

Abstract

AbstractThe drift mobility μd and the mobility-lifetime product μτ in undoped a-Si:H have been studied up to 130°C. The electron μde is temperature-activated with Eae = 0.13 to 0.16 eV. The electron (μτ)e increases with temperature T. For hole transport, we observe the transition from dispersive to non-dispersive transport with increasing T. The hole μdh is ∼ 1/100 of μde, and is activated with Eah = 0.34 to 0.48eV. The hole (μτ)h does not change much with T. A computer simulation demonstrates the high sensitivity of μd to the band tail width.