Abstract
The decrease of the deposition rate of SiO2 sputtered films is investigated by using time-of-flight apparatus. It is found that the increase of signal intensity of H atoms corresponds to the decrease of the deposition rate of SiO2 films, which confirms the reports by Hosokawa that the absorbed H2O at the target surface is the most important factor affecting the decrease of the deposition rate of SiO2 films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
