Abstract
Irradiation of a solid with intense plasma-ion beams produced within a high vacuumchamber (by the so-called Rod Plasma Injector [1]) is a strongly nonequilibrium process, which enablesachieving a number of effects which are impossible to be achieved with other methods. These are,amongst other: improvement of ceramics wettability, fabrication of stable copper-ceramics interfacesand stable Ni-Cu and Al-Cu interfaces, improvement of tribological properties and high temperatureoxidation resistance of stainless steel, photovoltaic junction formation, and many others. In the paper,the process of plasma-ion beam propagation regarding its time and energy distributions and the processof ion penetration of solids, resulting with ion implementation and temperature growth have beenanalyzed mathematically on basis of experimental data. Results of numerical calculations have beenpresented concerning temperature and dopant density time evolution.
Highlights
Irradiation of a solid with intense plasma-ion beams produced within a high vacuum chamber is a strongly nonequilibrium process, which enables achieving a number of effects which are impossible to be achieved with other methods
Irradiation of solids with so-called plasma-ion beams is a strongly nonequilibrium process, which enables a number of effects that are impossible to achieve with other methods [2]
The concept of the so-called Rod Plasma Injector (RPI) was proposed by Michał Gryziński [1, 15] and verified experimentally [16,17,18,19], including the recently set in operation IBIS-II RPI-type plasma generator [20]
Summary
Irradiation of solids with so-called plasma-ion beams is a strongly nonequilibrium process, which enables a number of effects that are impossible to achieve with other methods [2] These include improvement of wettability of ceramics [3,4,5], production of stable copper-ceramics interfaces [6], production of stable Ni-Cu and Al-Cu interfaces [7], improvement of properties of zirconium alloys [8], improvement of tribological properties of stainless steel [9], improvement of high temperature oxidation resistance of stainless steel [10], modification of superconducting and electrical properties of Mg–B structures [11], improvement of manganese distribution in Si with He+ and H+ plasma pulse irradiation [12], doping metals with nitrogen [13], and photovoltaic junction formation [14]. A very important feature of the RPI device, which distinguishes it from other plasma devices, is the fact that the emission of the plasma jets takes place in a high vacuum (the order of 10−6 Torr), enabling an effective implantation process to be achieved
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