Abstract
Abstract The systematic measurements of hysteresis loops of SrBi 2 Ta 2 O 9 (SBT) thin films (440 nm) were carried out after they were isothermally processed in forming gas (FG) for different periods of time. It was found that the remnant polarization of SBT thin films dropped about 50% when they were annealed in forming gas at 400 °C for only 1 min. At the same time, the coercive voltage dropped about 20%. Then during anneal time, from 1 to 6.5 min, the remnant polarization and coercive voltage did not have obvious change. When the anneal time was up to 7.5 min, the normal hysteresis loops could not be obtained. The possible physical mechanism was discussed in this paper to give an explanation of this time effect on the degradation of ferroelectric properties of SBT thin films during forming gas processing.
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