Abstract
We present a detailed analysis of the time dynamics of the down-coupling phenomenon (DCP) in 3-D NAND Flash memory strings. The transient time dynamics of the channel potential following the wordline (WL) bias transition from the pass voltage to zero is studied via numerical simulation, highlighting the existence of three temporal regimes controlled by different physical processes: electron emission from traps, hole injection from the string edges followed by capture, and propagation along the string. The impact of these processes is separately studied, followed by an analysis of the dependence of the DCP recovery time on architectural parameters. Results highlight the relevant physics and can be used as a design guideline for NAND strings with reduced sensitivity to the DCP.
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