Abstract
Temperature (T) and frequency (ω) dependent conductivity measurements are reported for n‐type indium antimonide (InSb) around the magnetic field induced metal‐insulator transition (MIT). For the sample with electron density n= 2.15×1014 cm−3, the critical field is observed at ∼0.7 T in dc transport measurements. The frequency dependent conductivity σ(ω) measured via terahertz time domain spectroscopy indicates a higher critical field ∼1.2 T. Both σdc(T) and σ1(ω) at low temperatures show power law dependence with exponents of α=1.2.
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