TIME DOMAIN ANALYSIS OF CARBON NANOTUBE INTERCONNECTS BASED ON DISTRIBUTED RLC MODEL

Abstract

This paper introduces an accurate analysis of time domain response of carbon nanotube (CNT) interconnects based on distributed RLC model that takes the effect of both the series resistance and the output parasitic capacitance of the driver into account. Using rigorous principle calculations, accurate expressions for the transfer function of these lines and their time domain response have been presented. It has been shown that the second-order transfer function cannot represent the distributed behavior of the long CNT interconnects, and the fourth-order approximation offers a better result. Also, the time response of a driven long CNT interconnect versus length and diameter have been studied. The obtained results show that the overshoot increases and the time delay decreases with increasing the CNT diameter, such that with the diameter value of 10 nm for a 3.3 mm CNT interconnect, the maximum overshoot value reaches about 95% of the amplitude of the driver input. On the contrary, the overshoot increases and the time delay decreases with decreasing the length of the CNT, such that with the length value of 1 mm for a 5 nm diameter CNT interconnect, the maximum overshoot reaches about 90% of the amplitude of the driver input.