Abstract
ABSTRACT For the realization of reliable nonvolatile phase-change memory operations, it is very important to understand the long-term behaviors of memory states with different resistance values. We investigated the time-dependent behaviors of RESET resistance states (RR) for the fabricated memory devices using Sn-doped GST, in which Sn amounts were varied to control the initial values of RR. It was found that the transient variations of RR showed an increasing trend with time, and that their behaviors were closely related to the microstructure of amorphous phase in the phase-change material.
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