Abstract
Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.
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