Abstract
ABSTRACTInterfacial reaction mechanisms were investigated in case of topotaxial formation of MgIn2O4 spinel on MgO crystals, which is an appropriate model system for thin film solid state reactions in ceramics. The reaction interface MgO/MgIn2O4(001), which is characterized by a large lattice misfit (+4.2%) between these cubic crystals, was investigated by transmission electron microscopy (TEM). Thin spinel films (thickness t< 0.5μm) consist of domains tilted off (≈3.5°) the exact cube-to-cube orientation into four directions, while thicker films (t> 1μm) show an accurate (001) orientation. High-resolution electron microscopy (HREM) showed that this time-dependent orientation behavior correlates with the atomic scale structure of the interface, especially with the different types of misfit dislocations. Based on these results, the misfit accommodation mechanism at the propagating reaction front in this spinel system is discussed including transitions between glide and climb processes.
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