Abstract
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
