Abstract
The transient current response of n-doped GaAs—AlGaAs multiple barrier systems is studied within the time-dependent Schrödinger equation. Open boundary conditions are designed to minimize spurious reflections at the simulation boundaries. A local time-dependent Hartree-exchange-correlation-potential is used to self-consistently account for the inter-carrier Coulomb interaction. Application to the resonant-tunneling double barrier reveals current oscillations which are due to charging and discharging of the well. Current oscillations are also obtained in the transient for multi-barrier systems
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