Abstract
The transient transport of photo-generated carriers andtemporal variation of the built-in field, during triggering insemi-insulating GaAs photoconductive switches, have been investigated byusing a special Monte Carlo particle simulator. It shows that the built-in fieldcan exceed the intrinsic avalanche field of semi-insulating GaAs undercertain optical and electrical conditions. In such a case, local breakdownionization is considered to be responsible for the transition in GaAs high-gainswitching. The optical and electrical triggering thresholds arecalculated and the calculated values of optical and electrical thresholdsand partial delay time are in agreement with the published experimentaldata.
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