Abstract
In this work, we models the optical generation and transient radiative recombination excess carrier lifetimes in direct band gap semiconductors Indium antimonide (Insb) during illumination and after switching off the illumination. The time dependence of excess carrier density and excess carrier lifetimes are determined by using the doping level 1017cm-3 and absorption rate 1:21x1024cm-3s-1. The transient mean times for each excess carrier lifetimes to reach their steady-state values and excess carrier lifetime are determined.
Highlights
Semiconductors are II-VI and III-V crystalline or amorphous solids with distinct electrical characteristics
Small direct band semiconductors with energy band gap ranged from 0.3 to 1.0 eV, like indium arsenide (InAs), gallium antimonide GaSb, indium antimonide, InSb are characterized by the absence or small amount of impurity materials, presence of very high charge carrier concentration and high charge carrier mobility [2]
The transient properties of all the excess carrier lifetimes before attaining the steady-state conditions are described in detail
Summary
Semiconductors are II-VI and III-V crystalline or amorphous solids with distinct electrical characteristics. Small direct band semiconductors with energy band gap ranged from 0.3 to 1.0 eV, like indium arsenide (InAs), gallium antimonide GaSb, indium antimonide, InSb are characterized by the absence or small amount of impurity materials, presence of very high charge carrier concentration and high charge carrier mobility [2]. The performance of semiconductor material depends on the lifetime of free charge carriers generated by the interaction of light with the material, referred to as the excess carriers’ life-. First the time dependence of the radiative recombination and generation excess carrier lifetimes in direct band gap Indium antimonide (Insb)semiconductors during illumination are determined, the time dependence of the transient radiative recombination lifetime after and before switching off the illumination is determined.
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