Abstract
Chemical amplification positive resists using partially tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for deep UV lithography. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl) iodonium triflate resolved 0.30-μm line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46mJ/cm2. Post-exposure delay effect of this resist system was studied. The deprotection reaction of THP-M for lower dose during the holding time at room temperature and incomplete deprotection reaction for higher dose were found to deteriorate the exposure characteristics.
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