Time and charge characterization of Hamamatsu Photonics silicon photomultipliers

G Galetta,E Nappi,F Garibaldi,F Ciciriello,L Lagamba,F Loddo,R Perrino,A Ranieri,F Licciulli,Р Де Лео ,F Corsi ,C Marzocca

doi:10.1051/epjconf/20146611028

Abstract

Two Hamamatsu Photonics silicon photomultipliers (SiPM) with same cell size 50×50 µm 2 and different sensitive area (1×1 mm 2 vs. 3×3 mm 2 ) have been characterized in charge and time by means of a 409 nm pico-laser. The time resolution was studied for the detection of few photoelectrons. The results obtained are relevant for the employment of SiPM in ring imaging Cherenkov detectors (RICH).

Highlights

silicon photomultipliers (SiPM) or Multi-Pixel Photon Counters (MPPC) have increasingly gained interest over ordinary photomultipliers because of several advantages
We have performed a characterization of time and charge of two models [2] of Hamamatsu MPPC (Fig. 1a) and report the results in this contribution
The measurements have been performed at various bias voltages and light intensities, in order to get the characteristic breakdown voltage of the two devices (Fig. 3), and to study the time resolution as a function of the overvoltage and number of pe’s

Summary

Introduction

SiPM or Multi-Pixel Photon Counters (MPPC) have increasingly gained interest over ordinary photomultipliers because of several advantages. The low-voltage operation, small sizes, single photon counting capabilities, magnetic field immunity and others make useful their employment in many experiments, spanning from medical imaging to high energy particle calorimetry. Their efficient single photon counting, short signal rise time and small size make SiPM/MPPC suitable [1]. MPPC are known [3] to perform very well in timing measurements owing to their typical signal shape (Fig. 1a), having short rise time. The measurement set-up (Fig. 1b) is based on a pulsed light source and MPPC sensor.

68.65 V pe pe pe

Conclusions