Abstract
The multiple DX related emission centers are studied using the isothermal time analyzed transient spectroscopy (TATS). Four distinct emitting centers have been obtained using higher order TATS in the same silicon doped Al0.33As0.67As sample. A systematic observation of these levels has helped in reducing the ambiguity regarding the emission parameters of the DX centers. Particularly the activation energies, the nature of nonexponentiality of emission, and the effect of charge redistribution for the DX center have been made explicit. Our results suggest that the activation energy of each of the four distinct centers have a Gaussian distribution with similar full width half maxima of about 20 meV. Limitations of temperature scanning techniques such as deep level transient spectroscopy are pointed out.
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