Abstract
Transient interferometric mapping (TIM) and backside light emission microscopy (EMMI) are applied to study the trigger behavior and on-state spreading in discrete-technology electrostatic discharge (ESD) protection silicon controlled rectifier (SCR) test-structures without and with trigger taps. The trigger taps or device corners are clearly identified as regions where the avalanche breakdown and SCR action are initiated. The regions relevant to the holding current can be identified by EMMI. In SCR mode the injection regions from the npn and pnp emitters have been localized by TIM. The on-state spreading (OSS) speed of 1–4μm/ns obtained from TIM is consistent with the results of 3D TCAD simulations. The driving force of the OSS is discussed on the basis of TCAD results.
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