Abstract
The composition profile of an (AlAs) 1 2 (GaAs) 1 2 tilted superlattice was determined to be sinusoidal, varying from Al 0.4 Ga 0.6As to Al 0.6Ga 0.4As. The energy and polarization of the direct and indirect band gap photoluminescence were examined before and after thermally induced disordering. The shift of the direct band gap photoluminescence peak was measured as a function of layer interdiffusion and compared to a theoretical model to find the composition profile. Raman spectroscopy was used to measure the linewidths of the tilted superlattice longitudinal optic phonons. These linewidths were compared to those from a uniform alloy and a conventional superlattice. The data support the assignment of a sinusoidal composition profile to the tilted superlattice.
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