Tight-binding parameters of graphite determined with angle-resolved photoemission spectra

Abstract

An exfoliated Kish graphite sample on a heavily n-doped Si substrate covered with native oxide was prepared with a conventional micromechanical cleavage method. From angle-resolved photoemission spectra (ARPES), we measured the band structure of graphite over photon energies from 28eV to 116eV. The inner potential V0=17.25eV is determined with a period from the band dispersion in the KH direction. A set of parameters in the tight-binding method and the SWMcC model for graphite is extracted from the fitted results. A comparison of constant-energy mapping results at large binding energy indicates the reliability of the tight-binding parameters extracted from the ARPES results.