Abstract
In this work we investigate the electronic and optical properties of self-assembled quantum dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated from the one-particle wave functions which fully include the atomistic wurtzite structure of the low-dimensional heterostructures and serve as an input for the calculation of optical spectra. For the investigated $\mathrm{In}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ material system, the optical selection rules are found to be strongly affected by band-mixing effects for the localized valence band states. Within this framework, excitonic absorption and emission spectra are analyzed for different sizes of the investigated lens-shaped quantum dots, including the influence of the intrinsic and strain-induced electrostatic field of the wurtzite structure. A dark exciton ground state for small quantum dots is found.
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