TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

Abstract

The total ionizing dose (TID) response of pMOS nanowire field-effect transistors (NWFETs) is investigated using X-ray irradiations. The TID-induced voltage shift is studied using two NWFET widths and four bias configurations. Both the impact of the geometry and the influence of the bias configuration during irradiation on the radiation-induced trapped charges into the buried oxide are thus addressed. The impact of gate length downsizing on the NWFET’s electrical characteristics in several bias configurations is studied and compared to one of the nMOS NWFETs to state on the mechanisms which leads to their TID response.