Abstract
The breakdown voltage (BVDS) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID). The results show BVDS degradation with accumulated dose. TID degradation with the MOS device biased off is more severe than that with the MOS device biased on. Also, LVD BVDS is more significant than UD BVDS at a given TID. Technology computer-aided design (TCAD) simulation is used to gain an insight into the mechanism causing BVDS degradation.
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