Abstract
Bat-shaped nanorods (nanobats) of Ti5Si4 were grown on titanium foil by a vapor and condensation method without catalysts. The average diameter of the heads and the tails of the nanobats as well as the length of the nanobats are 25, 15, and 350 nm, respectively. The resistivity of the Ti5Si4 nanobat was measured to be 348 Ωμ·cm. Excellent field emission properties were found with the turn-on voltage of the Ti5Si4 nanobats at the current density of 1 μA/cm2 being 1.47 V/μm and field amplification factor being as high as 1350. The possession of remarkable field emission properties indicates that the Ti5Si4 nanobats may be applicable as emitters in flat panel display and vacuum microelectronic devices.
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