Abstract
Irradiation damage response under electron beam irradiation energies of 120 keV and 200 keV on Ti3SiC2 was investigated in this study. The surface of material became rough under 120 keV caused by the electron beam sputtering. Under 200 keV electron irradiation, the surface damage was more serious. Diffraction spots with low intensity of some crystal planes due to the displacement of Si atoms at 200 keV. Point defects caused by irradiation reduced the a-axis lattice constant by 1.8%. However, even after irradiation for 600 s, no amorphous ring was observed.
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