Abstract

AbstractMXenes, a promising family of 2D transition metal carbides/nitrides, are renowned for their exceptional electronic conductivity and mechanical stability, establishing them as highly desirable candidates for advanced electromagnetic interference (EMI) shielding material. Despite these advantages, challenges persist in optimizing MXene synthesis methods and improving their oxidation resistance. Surface defects on MXenes significantly impact their electronic properties, impeding charge transport and catalyzing the oxidation process. In this study, a novel synthesis protocol derived from the conventional, minimally invasive layer delamination (MILD) method, is presented. Two additional steps are introduced aiming at enhancing process yield, addressing a crucial issue as conventional methods often yield high‐quality individual MXene flakes but struggle to generate sufficient quantities for bulk material production. This approach successfully yields Ti3C2Tx films with excellent conductivity (3973.72 ±121.31 Scm−1) and an average EMI shielding effectiveness (SE) of 56.09 ± 1.60 dB within the 1.5 to 10 GHz frequency range at 35% relative humidity (RH). Furthermore, this investigation delves into the long‐term oxidation stability of these films under varying RH conditions. These findings underscore the effectiveness of this innovative synthesis approach in elevating both the conductivity and EMI shielding capabilities of MXene materials. This advancement represents a significant step toward harnessing MXenes for practical applications requiring robust EMI shielding solutions. Additionally, insights into long‐term stability offer critical considerations for implementing MXenes in real‐world environments.

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