Abstract
The reactions between nickel and germanium are investigated by the incorporation of a titanium interlayer on germanium (100) substrate. Under microwave annealing (MWA), the nickel germanide layers are formed from 150 °C to 350 °C for 360 s in ambient nitrogen atmosphere. It is found that the best quality nickel germanide is achieved by microwave annealing at 350 °C. The titanium interlayer becomes a titanium cap layer after annealing. Increasing the diffusion of Ni by MWA and decreasing the diffusion of Ni by Ti are ascribed to induce the uniform formation of nickel germanide layer at low MWA temperature.
Highlights
Germanium (Ge) has attracted a great deal of contemporary interest as a channel material in high-performance transistors, due to its higher hole and electron mobility thanSi [1,2,3]
It was reported that the thermal stability of Nix Gey on bulk Ge could be improved by pre-germanidation implantation [6], prior-germanidation fluorine implantation into Ge substrate [7], dopant segregation [8], or introducing other elements, such as titanium (Ti) [9], platinum (Pt) [10], tungsten (W) [11], tantalum (Ta) [11,12], cobalt (Co) [13], ytterbium (Yb) [14], and so on
Hu et al reported that the formation of low-resistivity nickel germanosilide (NiSiGe) film via microwave heating occurs at temperatures about 100 ◦ C
Summary
Germanium (Ge) has attracted a great deal of contemporary interest as a channel material in high-performance transistors, due to its higher hole and electron mobility than. Various annealing methods have been used to prepare Nix Gey films, such as rapid thermal annealing (RTA) [15] and laser annealing [16]. Hu et al reported that the formation of low-resistivity nickel germanosilide (NiSiGe) film via microwave heating occurs at temperatures about 100 ◦ C lower than using RTA [21]. We investigated the formation of Nix Gey layers by Ti incorporation on a Ge (100) substrate under MWA. The mechanism analysis of MWA and the effects of Ti mediation are discussed in detail
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