Abstract
We comprehensively study the influences of Ti doping on the phase change properties of Sn2Se3 film through experiments and ab initio molecular dynamics simulations. Both the crystallization temperature and the activation energy of Sn2Se3 increase significantly by introducing Ti atoms, indicating enhanced thermal stability. Based on the results of x-ray photoelectron spectroscopy in combination with theoretical calculations, we assume that Ti atoms tend to form covalent bonds with Se in amorphous Sn2Se3. Because of the stronger bond energy of Ti-Se and the change of the bonding environment around Ti atoms, it is more difficult to rearrange the atoms to form long-range order, thus giving rise to the thermal stability of the amorphous phase. Our work shows that Ti doped Sn2Se3 is a promising candidate for the application of next generation non-volatile memory.
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