Abstract
Compact vacuum devices of output power even at 1W and at terahertz (THz) frequencies above 100GHz offer enormous applications for wide band communication, imaging radars, and spectroscopy. These active vacuum devices are also required in many more unexplored areas of scientific, industrial and medical applications. Such vacuum devices at frequency above 100GHz are very small in dimension and microelectronic technology is needed for their fabrication. Successful development of THz vacuum microelectronic devices therefore needs fusion of vacuum tube technology with the semi-conductor technology. Significant efforts are being carried out worldwide to develop successfully such compact vacuum devices using available LIGA and DRIE semiconductor technologies. This paper presents some details on THz vacuum microelectronic devices.
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