Abstract
Resonant THz excitation of electrons is considered in a three-level heterostructure formed by placing upper (u-) and lower (l-) narrow quantum wells into a wide quantum well. The photo-induced current is calculated for the case of independently contacted narrow wells, when electrons excited from the u-well to the wide well are captured in the l-well by spontaneous emission of optical phonons. We estimate the sensitivity of the photoresponse for a GaAs/AlGaAs-based structure to be ∼0.2 A cm−2 for a pump of 50 µm wavelength with intensity ∼1 W cm−2.
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