THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure

Abstract

The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg0.82Cd0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain can be greater than external losses at a pump radiation intensity with a wavelength of 2.3 μm, exceeding 850 kW cm−2. Additional doping of the Hg0.82Cd0.18Te layer with a donor impurity having a concentration of 4 × 1017 cm−3 will lead to a 1.5-fold decrease in the threshold pump intensity.