Abstract
The gain compression and excitation of higher order harmonics in 3 nm wide on-insulator type FinFETs is investigated. The high computational burden related to the time-resolved analysis of such three-dimensional devices is dealt with by applying a mode-space approach onto a Quantum Liouville-type Equation. With this approach an increase in gain compression and higher order harmonic distortion is observed when decreasing the fin height from 5 to 3 nm.
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