Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation

C Kothandaraman,C Parks,Krishna Tunga ,J Oakley ,W Landers ,J Safran ,Mukta Farooq ,J Liu ,K Petrarca ,S Cohen ,Chris Collins ,John Golz ,Andreas Martin ,Troy Graves-Abe ,Sami Rosenblatt ,N Robson ,Subramanian S Iyer

doi:10.1109/iedm.2014.7047053

Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation

C Kothandaraman, C Parks + Show 15 more

https://doi.org/10.1109/iedm.2014.7047053

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Publication Date: Dec 1, 2014

Citations: 6

Affiliation: IBM (United States)

#Devices In Close Proximity #Through Silicon Via + Show 8 more

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Abstract

A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.

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