Abstract

A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm−1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

Highlights

  • Semiconductor nanowires (NWs) have been investigated for a broad range of potential applications, such as in electronics,[1] optoelectronics,[2 ] eld emission,[3] the biosciences, and energy sciences. p-Type semiconductors with cupric oxide (CuO)[4] have attracted much attention because of their interesting properties and potential applications in eld emission devices, solar cells, superconductors, and photo detectors

  • CuO/Cu2O composite nanowires are grown on a concave through silicon via (TSV) structure

  • To fabricate the concave TSV structure, a 6-inch silicon substrate with a (100) orientation was wet cleaned in a standard RCA process

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Summary

Introduction

Semiconductor nanowires (NWs) have been investigated for a broad range of potential applications, such as in electronics,[1] optoelectronics,[2 ] eld emission,[3] the biosciences, and energy sciences. p-Type semiconductors with cupric oxide (CuO)[4] have attracted much attention because of their interesting properties and potential applications in eld emission devices, solar cells, superconductors, and photo detectors. Through-silicon via submount for the CuO/Cu2O nanostructured field emission display A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation.

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