Abstract
A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 mΩ. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250°C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250°C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
