Abstract
Abstract A new laser photo-etching method has been developed for the formation of microscopic holes on a Through-Hole Contact (THC) integrated-type a-Si solar cell which is expected to obtain high output performance. It was confirmed that the insulator film can be removed without causing damage to the TCO (Transparent Conductive Oxide) film during formation of microscopic holes using a laser photo-etching method. A 6/s% increase in the maximum output power of THC solar cells was obtained by optimizing the hole pattern compared with that of conventional solar cells. Based on this technique, a conversion efficiency of 10.55% for 10 cm x 10 cm THC integrated-type a-Si solar cell submodules was achieved.
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