Abstract
High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) in combination with strain mapping techniques provides a powerful tool for quantitative analysis of crystalline semiconductor materials. Due to the complex interaction of a focused probe and a sample in HAADF, the calculation of each pixel in a simulation process requires a complete multislice iteration, making the overall computing process a rather demanding task in time and memory. SICSTEM is a parallel software code recently developed for running on the University of Cadiz Supercomputer (3.75 Tflops) that allows the simulation of images from large nanostructures containing more than one million atoms. The software has been designed to be able to generate not only one dimensional line scans or two dimensional images, but also to perform optical sectioning in the STEM simulation process, providing an easy way to simulate 3D HAADF-STEM images. In this work we consider GaAs capped GaSb nanostructures epitaxially oriented on a GaAs substrate. A methodology has been developed by combining the through-focal series STEM imaging and image analysis to estimate shape and position of buried GaSb nanostructures.
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