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Abstract
Results of three-dimensional Monte Carlo simulations of nanocrystal (NC) memory cells are presented to investigate the statistical properties of the threshold-voltage shift (/spl Delta/V/sub T/). It is shown that NC-number fluctuations dominate the /spl Delta/V/sub T/ spread in the ON-state cell conduction regime, while percolation effects add a significant contribution to the statistical spread in the subthreshold region. The dependence of the /spl Delta/V/sub T/ statistics on the cell geometry is also investigated, which shows that NC number and position fluctuations can strongly affect the memory performance and must be suitably modeled.
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