Abstract
Ion implantation has been widely employed to adjust the threshold voltage of MOS transistors made on low-conductivity substrates. However, the temperature variation of device characteristics associated with the ion implantation has not been fully understood. In this paper, an analysis of the effect of the ion implantation on the threshold-voltage drift is presented, and simple but accurate design equations for predicting the temperature coefficients of the threshold voltages of implanted devices relative to those of unimplanted devices are given. Experimental results from four basic types of devices exhibit close agreement with theory. The analysis presented here is directly applicable to the design of an on-chip NMOS voltage reference based on the threshold voltage difference due to the ion implantation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
