Threshold voltage shift by quantum confinement in ultra-thin body device

Yang-Kyu Choi Yang-Kyu Choi,Tsu-Jae King Tsu-Jae King,Chenming Hu Chenming Hu,Daewon Ha Daewon Ha

doi:10.1109/drc.2001.937884

Threshold voltage shift by quantum confinement in ultra-thin body device

Yang-Kyu Choi Yang-Kyu Choi, Tsu-Jae King Tsu-Jae King + Show 2 more

https://doi.org/10.1109/drc.2001.937884

Copy DOI

Publication Date: Jun 25, 2001

Citations: 6

Affiliation: University of California, Berkeley

#Ultra-thin Body Device #Threshold Voltage Shift + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

The threshold voltage shift caused by quantum confinement in ultra-thin body devices (UTB) is observed experimentally. An analytical model is proposed and shows a good agreement with the experimental data of both PMOSFET and NMOSFET. It predicts a larger threshold voltage shift for a lighter body-doping, which is opposite to the trend in the bulk device. This threshold voltage shift must be taken into account in the design of UTB devices, including the double gate MOSFET.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.