Abstract
This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.
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