Abstract
In this work we use an innovative transient technique based on the pulsed C– V measurement and present detailed investigation and simulation of threshold voltage instability in Al 2O 3 flash memories, on a timescale spanning from hundreds of microseconds to ten minutes. Advantages of the pulsed over the steady-state C– V technique lye in that it can monitor capacitance transients at extremely short times, and it does not affect the flat-band condition itself, since the measurement time is short enough that trapping during the measurement does not occur. The flat-band voltage instability has been studied systematically as a function of the film thickness, the detrapping time and the discharge accelerating voltage. A detailed description of the detrapping dynamics is given.
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