Abstract
A film of deposited on thermally grown was studied to determine the effect that charge accumulation at the deposited film interface has on threshold voltage stability. shifts under bias and temperature result from this charge accumulation at the nitride‐oxide interface. In addition to this charge buildup‐related shift, the second mechanism causing the enhanced shift in is found to occur on long‐time, bias‐temperature stress. This second mechanism is proportional to the square root of biasing time and is exponentially dependent on temperature. The activation energy is found to be . Positive ionic drift is suggested as the mechanism causing this enhanced .
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