Abstract
This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ( $V_{th}$ ) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.
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