Abstract
A method for controlling the threshold voltage which has a significant problem in ion-sensitive transistors (IST) with floating gate structures was proposed in this study. Gated lateral pnp-type bipolar junction transistor (BJT) was used in our experiment and was immerged in ionic solution. The experiment results indicated that under a large negative gate bias condition, the threshold voltage can shift in normal state with specific bias. Moreover, we discussed the reasons for the changing phenomenon of threshold voltage in dielectric of gated lateral BJT in electrolyte.
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