Threshold Switching of ALD-NbOx Films for Neuromorphic Applications

Abstract

Neuromorphic architecture has been suggested as an alternative to the existing von Neumann counterpart. The neuromorphic approach allows massively parallel processing and asynchronous timing schemes with low power consumption. This work presents ALD- NbOx thin films as a potential material for neuromorphic computation. NbO2 shows metal-insulator transition which is the desired property for threshold switching (TS). However, direct forming of NbO2 is rather difficult and deposited NbOx tends predominantly to result in Nb2O5. To obtain NbO2 we used an oxygen scavenger layer of Ti to alter Nb2O5 to NbO2. After a proper electroforming process, the device with a Ti insert showed metal-insulator transition above a specific voltage, i.e., a threshold voltage, and a stable threshold switching characteristics with wide operation range, characteristics not observed in the absence of a Ti insert. The well-defined TS characteristics clearly indicated the Ti role in controlling the oxidation state of NbOx.To verify the oxidation state of NbOx, XPS depth profile analyses were used. The presence of a Ti insertion layer resulted in an increase of 10~30% in Nb4+ states, depending on the total thickness of the NbOx films, while Nb5+ states decreased. Bearing in mind practical applications, we used only CMOS-compatible materials and processes to fabricate TS devices. Our approach suggests a reliable method to fabricate NbO2 neurons.Acknowledgment: This work was supported by Electronics and Telecommunications Research Institute (ETRI) grant funded by the Korean government under grant " Non-CMOS Neuromorphic Device Basic Technology." (22BB1110).