Abstract
The experimentally observed thresholds for laser operation of optically pumped GaAs platelets are presented. The measurements were performed on uniformly doped samples of p-type, n-type, and compensated crystal (doping range 1014/cm3≤n, p≤1020/cm3). The observed thresholds are considerably lower than previously measured or predicted and exhibit no essential dependence upon impurity concentration. The 16-meV shift of laser photon energy from bandgap in lightly doped GaAs is ascribed, as before, to electron-hole-lattice (EHL) interactions. Based upon the results of platelet laser threshold data and photon energy data, a comparison is made of the relative strength of the various EHL interaction mechanisms. If Coulomb interaction and dielectric screening can be ignored, over a certain doping range a remarkable fit of the photon energy data is afforded by the electron-electron interaction mechanism.
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