Abstract
A systematic study has been made of the effect of the middle active region width in double heterojunction Pb1−xSnx Te/PbTe laser diodes on the lasing threshold. A fourfold reduction in pulsed threshold over that of comparable single heterojunction lasers is demonstrated in lasers having 4-μm-wide middle regions. A comparison is also made between lasers fabricated by liquid phase epitaxy using undoped melts and substrates, and using thallium-doped p -type PbTe layers; the latter is shown to yield thresholds as much as two times lower.
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